Hanchen Liu
Doctoral Researcher
Doctoral Researcher
T411 Dept. Electronics and Nanoeng
Full researcher profile
https://research.aalto.fi/...
Email
[email protected]
Phone number
+358504775665
Research groups
- Hele Savin Group, Doctoral Researcher
Publications
(poster) ALD SiO2 provides efficient Ge surface passivation with a tailorable charge polarity
Oskari Leiviskä, Hanchen Liu, John Fung, Joonas Isometsä, Ville Vähänissi, Hele Savin
2024
Efficient surface passivation of germanium nanostructures with 1% reflectance
John Fung, Joonas Isometsä, Juha Pekka Lehtiö, Toni Pasanen, Hanchen Liu, Oskari Leiviskä, Pekka Laukkanen, Hele Savin, Ville Vähänissi
2023
Nanotechnology
Surface passivation of Germanium with ALD Al2O3: Impact of Composition and Crystallinity of GeOx Interlayer
Joonas Isometsä, Zahra Jahanshah Rad, John Fung, Hanchen Liu, Juha Pekka Lehtiö, Toni Pasanen, Oskari Leiviskä, Mikko Miettinen, P. Laukkanen, K. Kokko, Hele Savin, Ville Vähänissi
2023
Crystals
Comparison of SiNx-based Surface Passivation Between Germanium and Silicon
Hanchen Liu, Toni Pasanen, John Fung, Joonas Isometsä, Oskari Leiviskä, Ville Vähänissi, Hele Savin
2023
Physica Status Solidi (A) Applications and Materials Science
(oral talk) Controlling SiO2 thin film charge and interface defect density on germanium
Hanchen Liu, Toni Pasanen, Oskari Leiviskä, Joonas Isometsä, John Fung, Marko Yli-Koski, Mikko Miettinen, Pekka J. Laukkanen, Ville Vähänissi, Hele Savin
2023
Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium
Hanchen Liu, Toni Pasanen, Oskari Leiviskä, Joonas Isometsä, John Fung, Marko Yli-Koski, Mikko Miettinen, Pekka Laukkanen, Ville Vähänissi, Hele Savin
2023
Applied Physics Letters
Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications–Effects of Precursor and Operating Conditions
Vladyslav Matkivskyi, Oskari Leiviskä, Sigurd Wenner, Liu Hanchen, Ville Vahanissi, Hele Savin, Marisa Di Sabatino, Gabriella Tranell
2023
Materials
(poster) Reduction of defect density at Ge/Al2O3 interface using GeO2 interfacial layers
Joonas Isometsä, John Fung, Toni Pasanen, Hanchen Liu, Oskari Leiviskä, Marko Yli-Koski, Ville Vähänissi, Hele Savin
2022
(oral talk) Controlling charge polarity and defect density at Ge/Al2O3 interface using SiNx interlayer
Hanchen Liu, Toni Pasanen, Tsun Hang Fung, Joonas Isometsä, Oskari Leiviskä, Ville Vähänissi, Hele Savin
2022
Achieving surface recombination velocity below 10 cm/s in n-type Germanium using ALD Al2O3
Joonas Isometsä, John Fung, Toni Pasanen, Hanchen Liu, Marko Yli-Koski, Ville Vähänissi, Hele Savin
2021
APL Materials