Sami Suihkonen
Visiting Scholar
Visiting Scholar
T410 Dept. Electrical Engineering and Automation
Full researcher profile
https://research.aalto.fi/...
Email
[email protected]
Phone number
+358503618657
Areas of expertise
Optoelectronics, GaN, LEDs
Research groups
- Electronics Integration and Reliability, Visitor (Faculty)
Publications
Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabrication
Kristina Bespalova, Glenn Ross, Sami Suihkonen, Mervi Paulasto-Kröckel
2024
Investigative characterization of delamination at TiW-Cu interface in low-temperature bonded interconnects
Obert Golim, Vesa Vuorinen, Glenn Ross, Sami Suihkonen, Mervi Paulasto-Kröckel
2024
Ultrasensitive Monolithic Dopamine Microsensors Employing Vertically Aligned Carbon Nanofibers
Lingju Meng, Maedeh Akhoundian, Anas Al Azawi, Yalda Shoja, Pei Yin Chi, Kristoffer Meinander, Sami Suihkonen, Sami Franssila
2024
Pushing the limits of non-radiative recombination suppression in GaAs/GaInP light emitting diodes by doping profile engineering
Ahmad Shahahmadi, Pyry Kivisaari, Benoît Behaghel, Ivan Radevici, Sami Suihkonen, Jani Oksanen
2024
Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal– Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111)
Pinki Pal, Amadeep Kaur, Sami Suihkonen, Jori Lemettinen, A. Laha, Subhabrata Dhar, Suddhasatta Mahapatra
2023
Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon
H Seppanen, I Prozheev, C Kauppinen, S Suihkonen, K Mizohata, H Lipsanen
2023
Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing
Hironori Okumura, Yasuhiro Watanabe, Tomohiko Shibata, Kohei Yoshizawa, Akira Uedono, Hiroki Tokunaga, Shuuichi Koseki, Tadanobu Arimura, Sami Suihkonen, Tomás Palacios
2022
High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111)
Pinki Pal, Bhupesh Bhardwaj, Robin Dahiya, Sami Suihkonen, Jori Lemettinen, Apurba Laha, Dinesh Kabra, Suddhasatta Mahapatra
2022
2022 IEEE International Conference on Emerging Electronics, ICEE 2022
A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer
Ravindra Singh Pokharia, Ritam Sarkar, Shivam Singh, Swarup Deb, Sami Suihkonen, Jori Lemettinen, Subhabrata Dhar, Dinesh Kabra, Apurba Laha
2021
Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of /Si AlGaN/GaNHEMT With Improved ION/IOFF Operating at 473 K
Ritam Sarkar, Bhanu B. Upadhyay, Swagata Bhunia, Ravindra S. Pokharia, Dhiman Nag, S. Surapaneni, Jori Lemettinen, Sami Suihkonen, Philipp Gribisch, Hans Jorg Osten, Swaroop Ganguly, Dipankar Saha, Apurba Laha
2021